VACUUM & HEAT TREATMENT SYSTEMS
Integrated Vacuum & Heat Treatment Process Solutions
At Metriflow Solutions, we integrate core in-house innovations with trusted global partnerships to deliver complete vacuum and heat treatment process solutions. Our systems are engineered to enable safe, efficient, and high-performance manufacturing across semiconductor, biopharmaceutical, and advanced materials industries.
Supported by China’s robust supply chain ecosystem, we provide fully integrated systems that reduce total cost of ownership while maintaining world-class quality standards and reliable global delivery.
Crystal Growth Process Equipment
Thin-Film Process Equipment
- Single crystal silicon, silicon carbide (resistive, induction, liquid-phase), and diamond growth furnaces for semiconductor and advanced materials.
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- Advanced deposition solutions including monomer, continuous, magnetron sputtering, wire-feeding evaporation, electron beam evaporation, and CVD equipment.
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Heat Treatment Process Equipment
Sintering & Brazing Process Equipment
- Vacuum, atmosphere-protected, and continuous furnaces, including air quenching, annealing, diffusion, melting, quartz dehydroxylation, graphite purification, and high-temperature graphitization systems.
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- Comprehensive solutions covering vacuum, atmosphere, hot-press, and continuous sintering furnaces, as well as vacuum, hot-press, hydrogen, diffusion, and continuous brazing furnaces.
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Technical Specifications
Operating Temperature Range
~450–2450 °C (typical across series; final depends on furnace
type & hot-zone design)
Maximum Temperature
Up to 2450 °C (high-temperature graphitization / recrystallization
sintering models)
Temperature Uniformity
≤ ±3 °C to ±15 °C (typical:
≤ ±5 °C; process & zone configuration dependent)
Vacuum Level
Room-temperature vacuum: down to ≤ 5×10−5 Pa (brazing
series)
Working / chamber vacuum: typical ≤ 5×10−4 to 5×10−3 Pa (vacuum furnaces)
High-temperature systems: typical 1–5 Pa (graphitization / CVI/CVD variants)
Working / chamber vacuum: typical ≤ 5×10−4 to 5×10−3 Pa (vacuum furnaces)
High-temperature systems: typical 1–5 Pa (graphitization / CVI/CVD variants)
Leak / Pressure Rise
Vacuum leakage rate: ≤ 0.067 Pa/h (vacuum brazing series);
≤ 0.67 Pa/h (some high-temperature systems)
Pressure rise rate: ≤ 5 Pa/h (selected CVD/CVI systems)
Pressure rise rate: ≤ 5 Pa/h (selected CVD/CVI systems)
Gas Cooling / Quenching
Typical cooling pressure: 0.8–12 bar (gas quenching variants, model
dependent)
Brazing series examples: 80 kPa / 0.8 bar / 1.9 bar (by configuration)
Brazing series examples: 80 kPa / 0.8 bar / 1.9 bar (by configuration)
Process Gas / Atmosphere
Inert gases: Ar / N2 / inert mixtures (vacuum & continuous
systems)
Hydrogen / N2+H2 micro-positive pressure (hydrogen brazing / sintering variants)
Specialty gases (examples): R22/R32/R134A, natural gas, argon, nitrogen (application dependent)
Hydrogen / N2+H2 micro-positive pressure (hydrogen brazing / sintering variants)
Specialty gases (examples): R22/R32/R134A, natural gas, argon, nitrogen (application dependent)
Partial Pressure Control
10–1000 Pa (available on selected vacuum brazing systems)
Hot-Press / Thermocompression Pressure
5–1000 T (thermocompression brazing series); 2–800 T
(thermocompression sintering series)
Thin-Film Line Throughput (selected PVD systems)
Plate substrate speed: 30–1000 mm/min; film uniformity
≤ ±5%
Roll-to-roll coiling speed: 0.1–1000 m/min; substrate width up to 2000 mm (system dependent)
Roll-to-roll coiling speed: 0.1–1000 m/min; substrate width up to 2000 mm (system dependent)
Power
Varies by chamber size & heating method; example: up to 450 kW
(hydrogen brazing furnace variant)
Applications
Vacuum brazing (Ni-based superalloy, stainless, structural
steel, titanium alloy) Gas quenching heat treatment (tool steel,
bearing steel, high-temperature alloys) Graphite purification &
high-temperature graphitization SiC ceramic sintering (non-pressure /
reaction / recrystallization) Hydrogen sintering (HTCC / ceramic
metallization & substrates) Continuous vacuum furnace heat
treatment (metals & ceramics) CVD/CVI deposition (SiC/TaC
coatings, C/C composites densification) Crystal growth (SiC PVT/LPE,
diamond MPCVD, mono-Si ingot growth) PVD coating lines (magnetron
sputtering / arc / evaporation, roll-to-roll) Photovoltaic
furnace-tube processes (diffusion / PECVD / LPCVD platforms)