Furnace Tube Process Equipment

Metriflow Solutions provides a specialized line of furnace tube systems designed for semiconductor, photovoltaic, and advanced materials manufacturing.

Developed in collaboration with a leading domestic manufacturer of vacuum and thermal process systems, these horizontal furnaces feature precise temperature control, uniform gas distribution, and multi-zone heating for stable, repeatable performance in film growth and thermal diffusion processes.

Our tube furnaces are widely used for oxidation, diffusion, LPCVD, and PECVD applications — supporting technologies such as TOPCon solar cells, semiconductor wafers, and dielectric thin-film deposition.

Overview

1. Horizontal Low-Pressure Diffusion Furnace

Designed for precise dopant diffusion and oxidation processes in semiconductor and solar applications.

• Process temperature: up to 1200 °C

• Chamber type: multi-tube, horizontal configuration

• Atmosphere: nitrogen, oxygen, or mixed gases
  Applications: phosphorus or boron diffusion, oxide growth, drive-in processes.

2. Horizontal LPCVD System

Used for low-pressure chemical vapor deposition of polysilicon, silicon nitride, or silicon dioxide films.

• Temperature: 500–800 °C

• Pressure: 10–1000 Pa

• Uniformity: ≤ ±3% across wafer load

• Multi-zone heating and programmable gas flow
  Applications: poly-Si deposition, silicon nitride barrier films, passivation layers.

3. Tubular PECVD System

Plasma-enhanced system for low-temperature thin film deposition on wafers or substrates.

• Temperature: 300–600 °C

• RF plasma excitation

• High film density and adhesion control
  Applications: dielectric layers, anti-reflective coatings, and advanced photovoltaic films.

4. Horizontal Annealing Furnace

Supports thermal oxidation, annealing, and stress relief of wafers and thin films.

• Temperature: 300–1100 °C

• Controlled oxygen or nitrogen flow

• Excellent thermal uniformity and repeatability
  Applications: annealing of doped wafers, oxidation stabilization, stress relaxation.

Highlights

• Temperature capability: up to 1200 °C

• Pressure range: atmospheric to 10⁻³ Pa

• Temperature uniformity: ±3 °C

• Multi-zone programmable heating control

• Optional plasma (PECVD) or diffusion (LPCVD) modules

• Compatible with 6–12 inch wafers and photovoltaic substrates

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