Sintering Process Equipment

Metriflow Solutions provides a full suite of sintering furnaces and thermal process systems engineered for advanced ceramics, metal components, and composite materials.

Working with a leading domestic manufacturer of vacuum and thermal process systems, we deliver solutions that ensure precise temperature uniformity, controlled pressure, and reliable atmosphere management across R&D and industrial-scale production.

Our systems cover vacuum sintering, atmosphere sintering, hot-press sintering, and continuous high-temperature sintering, supporting applications from semiconductors and structural ceramics to high-performance electronic substrates.

Overview

1. Vacuum Sintering Furnace

For densification of metallic and ceramic materials under high vacuum.

• Temperature: up to 2300 °C

• Vacuum: ≤ 5 × 10⁻³ Pa

• Temperature uniformity: ±5 °C
  Applications: tungsten carbide, SiC, and advanced ceramic components.

2. Atmosphere Sintering Furnace

Operates in inert or reducing atmospheres (e.g., N₂, H₂, Ar) to prevent oxidation and control reactions.

• Max temperature: 2000 °C

• Pressure: 1–10⁵ Pa

• Configurable gas circulation and purification systems
  Applications: co-firing of electronic ceramics, metallized substrates.

3. Gas Pressure Sintering Furnace

Applies high pressure during sintering to achieve exceptional density and mechanical strength.

• Pressure: up to 10 MPa

• Temperature: 2000 °C

• Integrated degreasing and gas control modules
  Applications: Si₃N₄, AlN, and SiC structural parts and substrates.

4. Hot-Press Sintering Furnace

Combines heat and mechanical pressure to accelerate diffusion and bonding.

• Temperature: 1900–2200 °C

• Pressure: 2–800 T (configurable)

• Vacuum: ≤ 5 × 10⁻³ Pa
  Applications: AlN heating plates, BN ceramics, refractory metal targets.

5. Reaction Sintering Furnace

Used for chemical reactive sintering where material transformation occurs during densification.

• Operating temperature: 1800 °C

• Vacuum: ≤ 1 Pa

• Process gas: nitrogen or argon
  Applications: Si–C reaction bonding to form SiC ceramics.

6. Continuous Sintering Furnace

Automated system for high-throughput sintering of ceramic and metallic components.

• Temperature: up to 1900 °C

• Multi-zone heating (up to 16 zones)

• Process gas: N₂ or Ar, with micro-positive pressure
  Applications: aluminum nitride substrates, carbon composites, sintered alloys.

Highlights

• Maximum temperature: 2400 °C

• Vacuum: ≤ 5 × 10⁻³ Pa

• Pressure range: vacuum to 10 MPa

• Uniformity: ±5 °C across multi-zone chambers

• Supports degreasing, reactive, and continuous sintering

• Compatible with hydrogen, nitrogen, or argon atmospheres

• Modular configurations for R&D or industrial scale

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